PART |
Description |
Maker |
IS43R16400B |
Four internal banks for concurrent operation
|
Integrated Silicon Solution, Inc
|
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
1GB-DDR3L-AS4C128M8D3L |
internal banks for concurrent operation
|
Alliance Semiconductor ...
|
MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
PS2805C-4-V-F3 PS2805C-4-V-F3-A PS2805C-1-V-F3-A P |
HIGH ISOLATION VOL TAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER HIGH ISOLATION VOL TAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER
|
California Eastern Labs
|
HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz 4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic Samsung semiconductor
|
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
38721-7312 38721-7306 38721-7308 38721-7304 38721- |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-5 2种方式结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-5 8路结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 12未来路结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 10未来路结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 6未来路结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 2种方式结核病 25 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK
|
复位半导 Harwin PLC Ironwood Electronics MOLEX INC
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|